Analysis of Impurities in Power Semiconductor Device Packaging

Join our expert webinar to learn about power semiconductor device packaging impurities and analysis methods for preventing contamination.

If you’re manufacturing or retailing power modules in e-mobility or solar devices, you’ll know that components are sensitive to changes in environmental conditions such as temperature and humidity. Packaging materials can be affected by outgassing and contamination, leading to product failure. Standard procedures for microelectronic devices using current packaging materials can fail to prevent these issues and finding the root causes of these failures requires in-depth knowledge.

This webinar explores the causes behind semiconductor device failure. It will look at how individual application environments with extreme or volatile temperatures can result in condensing humidity or corrosive gas exposure. This can lead to metal migration and dendrite growth, especially in automotive and photovoltaic (PV) inverters.

Presenter Gerald Dallman will look at some typical failure mechanisms and the analysis required to identify them. Special sample preparation techniques and analysis procedures will be demonstrated and general material test procedures defined. Learn about test procedures for current power module packaging in particular application environments, as well as new techniques developed specifically for some of the main materials.

Understand how, with SGS’s help, you can manage the production of power module packaging to avoid contamination and product failure, thereby reducing risk and protecting your brand reputation.

Agenda

• Introduction
• Special use conditions of automotive electronics
• Standardized test procedures for high temperature, humidity and gas corrosion
• Typical failures detected by physical failure analysis
• Sample preparation and analysis steps
• Summary
• Q&A

Who should attend?

This webinar is aimed at quality assurance experts and microelectronic power device application developers.

Presenter

Gerald Dallmann
Division Manager Microelectronics and Special Analytics

Gerald has been Division Manager at SGS INSTITUT FRESENIUS GmbH in Dresden, Germany since 2009. His main focuses are materials and the failure analysis of semiconductor devices for client companies. After a diploma in Microelectronics Technology and Semiconductor Devices, he joined Zentrum Mikroelektronik Dresden. Prior to joining SGS, Gerald was Director for Technology Development with Siemens, Infineon and Qimonda, where he was responsible for process integration, yield enhancement, materials and technology development for dynamic random-access memory (DRAM).